2002-04-30 page 1 preliminary data spi10n10l SPP10N10L,spb10n10l sipmos ? ? ? ? power-transistor product summary v ds 100 v r ds ( on ) 154 m i d 10.3 a feature n-channel enhancement mode logic level 175c operating temperature avalanche rated d v /d t rated p-to263-3-2 p-to220-3-1 p-to262-3-1 marking 10n10l 10n10l 10n10l type package ordering code SPP10N10L p-to220-3-1 q67042-s4163 spb10n10l p-to263-3-2 q67042-s4164 spi10n10l p-to262-3-1 q67042-s4162 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c =25c t c =100c i d 10.3 8.1 a pulsed drain current t c =25c i d puls 42.2 avalanche energy, single pulse i d =10.3 a , v dd =25v, r gs =25 e as 60 mj reverse diode d v /d t i s =10.3a, v ds =80v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 50 w operating and storage temperature t j , t st g -55... +175 c iec climatic category; din iec 68-1 55/175/56
2002-04-30 page 2 preliminary data spi10n10l SPP10N10L,spb10n10l thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 3 k/w thermal resistance, junction - ambient, leaded r thja - - 100 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d = 21 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =100v, v gs =0v, t j =25c v ds =100v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =8.1a r ds(on) - 169 210 m drain-source on-state resistance v gs =10v, i d =8.1a r ds(on) - 124 154 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2002-04-30 page 3 preliminary data spi10n10l SPP10N10L,spb10n10l electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =8.1a 4.7 9.4 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 355 444 pf output capacitance c oss - 72 90 reverse transfer capacitance c rss - 42 63 turn-on delay time t d(on) v dd =50v, v gs =10v, i d =10.3a, r g =13 - 4.6 6.9 ns rise time t r - 19.1 28.7 turn-off delay time t d(off) - 27.8 41.7 fall time t f - 17.8 26.7 gate charge characteristics gate to source charge q gs v dd =80v, i d =10.3a - 1.1 1.4 nc gate to drain charge q gd - 7.3 11 gate charge total q g v dd =80v, i d =10.3a, v gs =0 to 10v - 17.7 22 gate plateau voltage v (p lateau ) v dd =80v, i d =10.3a - 3.8 - v reverse diode inverse diode continuous forward current i s t c =25c - - 10.3 a inv. diode direct current, pulse d i sm - - 42.2 inverse diode forward voltage v sd v gs =0v, i f =10.3a - 0.93 1.25 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 57 71 ns reverse recovery charge q rr - 126 158 nc
2002-04-30 page 4 preliminary data spi10n10l SPP10N10L,spb10n10l 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 5 10 15 20 25 30 35 40 45 w 55 SPP10N10L p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 1 2 3 4 5 6 7 8 9 10 a 12 SPP10N10L i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 0 10 1 10 2 10 3 v v ds -1 10 0 10 1 10 2 10 a SPP10N10L i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 4.8 s 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPP10N10L z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2002-04-30 page 5 preliminary data spi10n10l SPP10N10L,spb10n10l 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 2 4 6 8 10 v 14 v ds 0 5 10 15 a 25 i d 4.5v 4.7v 5v 5.5v 6v 7v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 2.5 5 7.5 10 12.5 15 17.5 20 a 25 i d 0 50 100 150 200 250 300 350 400 m 500 r ds(on) 4.5v 4.7v 5v 5.5v 6v 7v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 1 2 3 v 5 v gs 0 2 4 6 8 10 12 a 16 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 2 4 6 8 a 11 i d 0 1 2 3 4 5 6 7 8 s 10 g fs
2002-04-30 page 6 preliminary data spi10n10l SPP10N10L,spb10n10l 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 8.1 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 50 100 150 200 250 300 350 400 450 500 550 600 700 SPP10N10L r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0.8 1 1.2 1.4 1.6 1.8 2 v 2.4 v gs(th) i d =1ma i d =21a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 0 10 1 10 2 10 3 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a SPP10N10L i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2002-04-30 page 7 preliminary data spi10n10l SPP10N10L,spb10n10l 13 typ. avalanche energy e as = f ( t j ) par.: i d = 10.3 a , v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 5 10 15 20 25 30 35 40 45 50 mj 60 eas 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 10.3 a pulsed 0 4 8 12 16 20 nc 28 q gate 0 2 4 6 8 10 12 v 16 SPP10N10L v gs 20v 50v 80v 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 SPP10N10L v (br)dss
2002-04-30 page 8 preliminary data spi10n10l SPP10N10L,spb10n10l published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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